Kamfanin Samsung Electronics ya sanar da cewa ya fara kera manyan na'urorin ƙwaƙwalwar ajiya na DDR4 masu girman 8 Gb, kuma tare da su ya fara kera na'urorin RAM na farko na 32 GB DDR4 da aka yi niyya don sabar kamfanoni. Ana kera wadannan sabbin na’urorin RAM ne ta hanyar yin amfani da sabon tsarin kera na’ura mai karfin 20nm, wanda shi ne tsarin da ake amfani da shi wajen kera hatta na’urorin sarrafa wayoyin hannu a yau. Samsung yayi iƙirarin cewa waɗannan na'urorin ƙwaƙwalwar ajiya sun cika duk buƙatun babban aiki, babban yawa da ceton kuzari a cikin sabar kamfanoni na gaba.
Bugu da kari, tare da sabbin na'urori na 8Gb DDR4, Samsung ya kammala dukkan layin-sauyin DRAM da aka kera ta amfani da tsarin samar da 20-nm. Yau, wannan jerin ya haɗa da 6Gb LPDDR3 don na'urorin hannu da 4Gb DDR3 kayayyaki don PC. Bayan haka, kamar yadda aka ambata a sama, Samsung yana fara samar da 32GB RDIMM na'urorin ƙwaƙwalwar ajiya waɗanda ke ba da ƙimar canja wuri na 2 Mbps a kowane fil, wanda ke wakiltar haɓakar kashi 400% cikin ɗari idan aka kwatanta da ƙimar canja wurin 29 Mbps na ƙwaƙwalwar DDR1 uwar garken. Amma karfin wannan fasaha bai tsaya a 866 GB ba kuma Samsung ya bayyana cewa yin amfani da fasahar 3D TSV yana yiwuwa a haɓaka har zuwa 32 GB na ƙwaƙwalwar ajiya. Fa'idar sabbin kayayyaki kuma shine ƙarancin amfani da aka ambata, tunda waɗannan kwakwalwan kwamfuta na DDR3 suna buƙatar 128 volts, wanda a halin yanzu shine mafi ƙarancin ƙarfin lantarki.
//
//
*Madogararsa: Samsung
