Sashen Semiconductor Samsung Foundry ya sanar da cewa ya fara samar da kwakwalwan kwamfuta na 3nm a masana'anta da ke Hwasong. Ba kamar mutanen da suka gabata ba, waɗanda suka yi amfani da fasahar FinFet, Giant ɗin Koriya a yanzu yana amfani da gine-ginen transistor GAA (Gate-All-Around), wanda ke ƙara ƙarfin kuzari sosai.
3nm kwakwalwan kwamfuta tare da MBCFET (Multi-Bridge-Channel) gine-ginen GAA zai sami ingantaccen makamashi, a tsakanin sauran abubuwa, ta hanyar rage wutar lantarki. Hakanan Samsung yana amfani da nanoplate transistor a cikin kwakwalwan kwamfuta na semiconductor don babban aikin kwakwalwan kwamfuta na wayoyin hannu.
Gidan hoton hoto
Idan aka kwatanta da fasahar nanowire, nanoplates tare da tashoshi masu fadi suna ba da damar yin aiki mafi girma da ingantaccen aiki. Ta hanyar daidaita nisa na nanoplates, abokan cinikin Samsung na iya daidaita aiki da amfani da wutar lantarki daidai da bukatunsu.
Kuna iya sha'awar
Idan aka kwatanta da kwakwalwan kwamfuta na 5nm, a cewar Samsung, sabbin suna da mafi girman aiki na 23%, 45% rage yawan amfani da makamashi da 16% ƙarami. Ya kamata tsara su na 2 su ba da 30% mafi kyawun aiki, 50% mafi girman inganci da 35% ƙaramin yanki.
"Samsung yana girma cikin sauri yayin da muke ci gaba da nuna jagoranci a cikin aikace-aikacen fasahar zamani na gaba a masana'antu. Muna nufin ci gaba da wannan jagoranci tare da tsarin 3nm na farko tare da tsarin gine-ginen MBCFETTM. Za mu ci gaba da yin gyare-gyare a yunƙurin ci gaba da haɓaka fasahar fasaha da ƙirƙirar matakai waɗanda ke taimakawa hanzarta cimma balagaggen fasaha." In ji Siyoung Choi, shugaban masana'antar semiconductor na Samsung.
