Samsung ya bayyana shirye-shiryensa a cikin kasuwancin semiconductor a wani taro a Amurka. Ya nuna taswirar hanya da ke nuna canji a hankali zuwa 7nm LPP (Low Power Plus), 5nm LPE (Ƙarfin Ƙarfin Farko), 4nm LPE/LPP da 3nm Gate-All-Around Early/Plus fasaha.
Giant ɗin Koriya ta Kudu za ta fara samar da fasahar 7nm LPP, wanda za ta yi amfani da lithography na EUV, a cikin rabin na biyu na shekara mai zuwa, yayin da a lokaci guda TSMC mai hamayya yana so ya fara samarwa tare da ingantaccen tsarin 7nm + kuma ya fara samar da haɗari tare da tsarin 5nm. .
Samsung zai fara kera chipsets tare da tsarin 5nm LPE a ƙarshen 2019 da tsarin 4nm LPE/LPP yayin 2020. Fasahar 4nm ce za ta zama fasaha ta ƙarshe da za ta yi amfani da transistor FinFET. Duka 5nm da tsarin 4nm ana sa ran rage girman kwakwalwar kwakwalwar, amma a lokaci guda haɓaka aiki da rage yawan amfani.
Farawa da fasahar 3nm, kamfanin zai canza zuwa nasa MBCFET (Multi Bridge Channel FET) GAA (Gate All Around). Idan komai ya tafi bisa tsari, yakamata a samar da kwakwalwan kwamfuta a cikin 3 ta amfani da tsarin 2022nm.
